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GaN
Gallium Nitride is a stable wide bandgap semiconductor material. AKA: Gallium Nitride
See Also: LED, Transistor
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GaN substrates
Sumitomo Electric Industries, Ltd.
Gallium Nitride (GaN) substrates are widely used for optical devices in the blue-violate to green ranges due to their excellent material characteristics. In recent years, GaN substrates have been drawing attention for power devices. Many development projects are underway.
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GUVA-T11GD-L
UV-A Sensor
Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationGood Visible BlindnessHigh Responsivity & Low Dark Current
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High-Power CW Amplifiers
Our family of solid-state power amplifiers (SSPAs) utilizes proprietary technology and a proven building block approach that enables rapid customization to specific requirements. The world-class design team understands the tradeoffs between GaAs versus GaN and FET versus MMIC to quickly achieve the right design for the right problem. Whether you need a connectorized compact GaN SSPA or an integrated SSPA assembly, we have the technical know-how to deliver on-time and on-budget.
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Microscope Photoluminescence Spectrometer
Flex One
Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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Power Amplifiers
Analog Devices MMIC-based GaN and GaAs power amplifiers cover the low hundred MHz frequency range up through and including components in the W band (75 GHz to 110 GHz). In addition to components, our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for the wide variety of wired and wireless applications that they are used in.
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Rad Hard GaN Drivers
The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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RF Amplifiers up to 2500 MHz
L and S Band 1,2,4, and 8 Kilowatt rack mount solid state microwave amplifiers ideal for CW and pulse TWT amplifier replacement utilizing GaN technology and rivals the TWT amplifier in size and weight. Also available is our broad line of high power modules including 25, 50, and 100 watt pallets for integrating into your own power amplifier design.
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RF High Power Amplifier Modules
Analog Devices MMIC-based GaN and GaAs power amplifiers cover the low hundred MHz frequency range up through and including components in the Ka-band (29 GHz to 31 GHz). Our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for the wide variety of test, radar, and aerospace and defense applications that they are used in.
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Silicon & Compound Wafers
Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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Solid State Broadband High Power Amplifier
Model 2215
The 2215 is suitable for octave bandwidth high power CW, modulated, and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed within a single 5RU drawerincluding the forced air-cooling. Available operating voltage configurations are single-phase 220 VAC up to 400 Hz and 28 VDC.
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Solid State Broadband High Power Amplifier 1900 - 6000 MHz / 200 Watts
2215
The 2215 is suitable for octave bandwidth high power CW, modulated and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. for EMC, RF Product Test, Communications and Electronic Warfare applications.
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Solid State GaN (Gallium Nitride) Amplifiers
Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Solid State Power Amplifiers
SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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Ultra Broadband SSPA
Exodus Advanced Communications
Exodus Chip & Wire Hybrid ultra broadband amplifiers feature GaN, GaAsFET discrete die on ceramic substrate covering frequency ranges from 4GHz to 26.5GHz and power levels exceeding 500W.
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UV-A Sensor
GUVV-T20GD-U
Indium Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationHigh Responsivity & Low Dark Current
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UV-A Sensor
GUVA-S12SD
Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationGood Visible BlindnessHigh Responsivity & Low Dark Current
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UV-A Sensor
GUVV-S10SD
Indium Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationHigh Responsivity & Low Dark Current
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UV-A Sensor
GUVA-C22SD
Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationGood Visible BlindnessHigh Responsivity & Low Dark Current
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UV-A Sensor
GUVA-T11GD-L
Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationGood Visible BlindnessHigh Responsivity & Low Dark Current
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UV-A Sensor
GUVV-T10GD
Indium Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationHigh Responsivity & Low Dark Current
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UV-A Sensor
GUVA-T11GD
Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationGood Visible BlindnessHigh Responsivity & Low Dark Current
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UV/Visible Sensor
GVGR-T10GD
TO-46 with quartz glassIndium Gallium Nitride Based MaterialPN-type PhotodiodePhotovoltaic Mode OperationHigh Responsivity & Low Dark Current
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UV/Visible Sensor
GVGR-S11SD
SMD3528 with Si-encapsulantIndium Gallium Nitride Based MaterialPN-type PhotodiodePhotovoltaic Mode OperationHigh Responsivity & Low Dark Current
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UV/Visible Sensor
GVBL-T12GD
TO-46 with quartz glassIndium Gallium Nitride Based MaterialPN-type PhotodiodePhotovoltaic Mode OperationHigh Responsivity & Low Dark Current
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Visible Sensor
GVBL-S12SD
SMD3528 with Si-encapsulantIndium Gallium Nitride Based MaterialPN-type PhotodiodePhotovoltaic Mode OperationHigh Responsivity & Low Dark Current
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Osram High Power Blue Violet Laser Diodes (450-488nm)
The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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Broadband High Power Amplifiers
Chengdu KeyLink Microwave Technology Co., Ltd.
KeyLink's broadband high power amplifiers are available for operating frequencies from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 2 watts to over 500 watts. Based on state-of-the-art GaN, GaAs, LDMOS power devices and MMICs, KeyLink designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness.
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Defect Inspection Systems
Candela® defect inspection systems detect and classify a wide range of critical defects on compound semiconductor substrates (GaN, GaAs, InP, sapphire, SiC, etc.) and hard disk drives, with high sensitivity at production throughputs.
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